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The state-of-the-art determines the remaining useful lifetime (RUL) through a steady-state, fixed power cycling tests (PCT) without considering the impact of dynamically changing environmental conditions. It has resulted in considerable RUL prediction errors in the real world. However, the dynamic changing conditions (e.g., large temperature swings) may affect the degradation evolution of SiC MOSFET, which could eventually result in RUL changes. Thus, it must be integrated to make accurate predictions. To precisely understand the RUL variation complexity, the junction temperature (Tj) has been measured with a Negative Thermal Coefficient (NTC) thermistor, Temperature Sensitive Electrical Parameter (TSEP), and these profiles have been modeled through the thermal model RC foster network using Extended Kalman Filter (EKF). Then, the on-state resistance (Rds,on) variations and Degradation Acceleration Factor (DAF) under the dynamic environment conditions are integrated into a lifetime prediction model to accurately predict the RUL through the Long Short-Term Memory (LSTM) machine learning algorithm. 

Silicon carbide (SiC) power MOSFETs are widely applied to critical infrastructure in modern energy systems. Thus, accurately predicting its remaining useful lifetime (RUL) in real-world applications has become crucial. State-of-the-art explored its RUL through a power cycling test mostly considering constant environmental conditions (e.g., fixed temperature and humidity), which has resulted in considerable RUL prediction errors in real-world applications. This study directly integrates environmental factors into the RUL modeling to address this issue. Specifically, the junction temperature (Tj), on-state voltage (Vds,on), on-state resistance (Rds,on), and case temperature (TC) have been explored in various environmental conditions to understand their tight correlations with the RUL in the real world. Time series statistics models Autoregressive (AR) and Autoregressive Integrated Moving Average (ARIMA) have been used to predict SiC MOSFET RUL to gain new insights systematically. 

Multi-principal-element alloys (MPEAs) based on 3d-transition metals show remarkable mechanical properties. The stacking fault energy (SFE) in face-centered cubic (fcc) alloys is a critical property that controls underlying deformation mechanisms and mechanical response. Here, we present an exhaustive density-functional theory study on refractory- and copper-reinforced Cantor-based systems to ascertain the effects of refractory metal chemistry on SFE. We find that even a small percent change in refractory metal composition significantly changes SFEs, which correlates favorably with features like electronegativity variance, size effect, and heat of fusion. For fcc MPEAs, we also detail the changes in mechanical properties, such as bulk, Young’s, and shear moduli, as well as yield strength. A Labusch-type solute-solution-strengthening model was used to evaluate the temperature-dependent yield strength, which, combined with SFE, provides a design guide for high-performance alloys. We also analyzed the electronic structures of two down-selected alloys to reveal the underlying origin of optimal SFE and strength range in refractory-reinforced fcc MPEAs. These new insights on tuning SFEs and modifying composition-structure-property correlation in refractory- and copper-reinforced MPEAs by chemical disorder, provide a chemical route to tune twinning- and transformation-induced plasticity behavior. 

Additive Manufacturing (AM) has opened new frontiers for the design of refractory high-entropy alloys (HEAs) for high-temperature applications. The thermal conductivity of the AM feedstock is among the most important thermo-physical properties that control the melting and solidification process. Despite its significance, there remains a notable gap in both computational and experimental research concerning the thermal conductivity of HEAs. Here, we use density functional theory (DFT) to systematically investigate the alloying effects on the transport properties of Ti-Cr-Mo-W-V-Nb-Ta RHEAs, including electrical and thermal conductivities and the Seebeck coefficient. The relaxation time of charge carriers is a key underlying parameter determining thermal conductivity that is exceedingly challenging to predict from first principles alone, and we thus follow the approach by Mukherjee, Satsangi, and Singh [Chem Mater 32, 6507 (2022)] to optimize the relaxation time for RHEAs. We validated thermal conductivity predictions on elemental solids, binary and ternary alloys, and RHEAs and compared them against thermodynamic (CALPHAD) predictions and our experiments with good correlations. To understand observed trends in thermal conductivity, we assessed the phase stability, electronic structure, phonon, and intrinsic- and tensile strength of down-selected RHEAs. Our electronic structure and phonon results connect well with the observed compositional trends for thermal transport in RHEAs. Our DFT assessment and CALPHAD predictions provide a unique design guide for RHEAs with tailored thermal conductivity, a critical consideration for AM and thermal-management applications.